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  Datasheet File OCR Text:
 PHOTODIODE
Si PIN photodiode
S2744/S3588-08, -09
Large area sensors for scintillation detection
Features
q Higher sensitivity and low dark current than conventional type q Sensitivity matching with BGO and CsI (TI) scintillators q High quantum efficiency QE=85 % (=540 nm) q Low capacitance q High-speed response q High stability q Good energy resolution
Applications
q Scintillation detectors q Calorimeters q Hodoscopes q TOF counters q Air shower counters q Particle detectors, etc.
s General ratings / Absolute maximum ratings
Type No. Dimensional outline Window material Epoxy resin Window-less Epoxy resin Window-less Active area (mm) S2744-08 S2744-09 S3588-08 S3588-09 10 x 20 0.3 3 x 30 100 100 -20 to +60 -20 to +80 Depletion layer thickness (mm) Reverse voltage VR Max. Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (C) Storage temperature Tstg (C)
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
S p ectral response range (nm) S2744-08 S2744-09 S3588-08 S3588-09 320 to 1100 P e ak sensitivity wavelength p (nm) 960 Photo sensitivity S =p (A/W) 0.66 0.66 0.66 0.66 LSO BGO CsI(Tl) 420 nm 480 nm 540 nm (A/W) (A/W) (A/W) 0.20 0.30 0.36 0.22 0.33 0.41 0.20 0.30 0.36 0.22 0.33 0.41 Dark S h ort Terminal current circuit Cut-off capacitance Temp. ID current Ct NEP coefficient Frequency VR=70 V f= 1 M H z V R = 70 V Isc fc of ID 100 lx Typ. Max. TCID V R = 70 V V R = 70 V (A) 200 3 90 10 1.12 40 40 (nA) (nA) (times/ C) (MHz) 25 (pF) 85 4.7 x 10 -14 (W/Hz 1/2 )
Type No.
Si PIN photodiode
s Spectral response
0.7 0.6 (Typ. Ta=25 C)
S2744/S3588-08, -09
s Dark current vs. reverse voltage
10 nA (Typ. Ta=25 C)
s Photo sensitivity temperature characteristic
+1.5 (Typ.)
PHOTO SENSITIVITY (A/W)
S2744/S3588-09
0.5 0.4 0.3 0.2 0.1 0 200
TEMPERATURE COEFFICIENT (%/C)
+1.0
1 nA
+0.5
DARK CURRENT
100 pA
S2744/S3588-08
0
10 pA
400
600
800
1000
1200
-0.5 200
400
600
800
1000
1 pA 0.1
1
10
100
WAVELENGTH (nm)
KPINB0265EB
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KPINB0093EC KPINB0220EA
s Dark current vs. ambient temperature
1 A (Typ. VR=70 V)
s Terminal capacitance vs. reverse voltage
10 nF (Typ. Ta=25 C, f=1 MHz)
100 nA
TERMINAL CAPACITANCE
DARK CURRENT
10 nA
1 nF
S2744-08/-09
1 nA
100 pA
100 pF
10 pA
1 pA -20
0
20
40
60
80
10 pF 0.1
S3588-08/-09 1 10 100
AMBIENT TEMPERATURE (C)
KPINB0221EA
REVERSE VOLTAGE (V)
KPINB0222EB
s Dimensional outlines (unit: mm)
S2744-08/-09
27.0 -0.6 2.0 20.0
+0
S3588-08/-09
34.0 +0 - 0.8
+0
1.2
30.0
14.2 -0.4
10.0
+0
ACTIVE AREA
ACTIVE AREA
2.0 0.2
0.5
PHOTOSENSITIVE SURFACE
0.45
PHOTOSENSITIVE SURFACE
10
WHITE CERAMIC
WHITE CERAMIC
0.45 LEAD 2.5
0.45 LEAD 1.1
5.0 0.2
2.5 0.2
The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.
KPINA0039EB
10
The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.
1.52 0.2
3.0
5.8 -0.4
KPINA0042EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIN1049E04 Mar. 2006 DN


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